Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

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The surface morphology optimization of ohmic contacts and the Mg depileve easy clean out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency switching efficiency.In this study, better current density and reliable dynamic behaviors of p-GaN gate HEMTs were obtained simultaneously by adopting low-temperature microwave annealing (MWA) for the first time.Moreover, HEMTs fabricated using MWA have a higher ION/IOF ratio and lower gate leakage current than the HEMTs fabricated using rapid thermal annealing.Due to the local heating effect, a direct path rubbermaid 8 gallon trash can for electron flow can be formed between the two-dimensional electron gas and the ohmic metals with low bulges surface.Moreover, the Mg out-diffusion of p-GaN gate layer was also suppressed to maintain good current density and low interface traps.